CY14B104LA 4-Mbit (512K x 8/256K x 16) nvSRAM

Cypress Semiconductor

Description

CY14B104LA CY14B104NA 4-Mbit (512K × 8/256K × 16) nvSRAM 4-Mbit (512K × 8/256K × 16) nvSRAM .
STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down. RECALL to SRAM initiated by soft.

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Datasheet Specifications

Part number: CY14B104LA
Manufacturer: Cypress Semiconductor
File Size: 619.78 KB
Datasheet: CY14B104LA-CypressSemiconductor.pdf
Description: 4-Mbit (512K x 8/256K x 16) nvSRAM

Features

* 20 ns, 25 ns, and 45 ns access times
* Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA)
* Packages
* 44-/54-pin thin small outline package (TSOP) Type II
* 48-ball fine-pitch ball grid array (FBGA)
* Pb-free and restriction of hazardous substances (R

CY14B104LA Distributors

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CY14B104LA 4-Mbit 512K 256K nvSRAM Cypress Semiconductor

Cypress Semiconductor CY14B104LA-like datasheet