CY14B104LA Datasheet (Cypress Semiconductor) - 4-Mbit (512K x 8/256K x 16) nvSRAM

CY14B104LA, 4-Mbit (512K x 8/256K x 16) nvSRAM

* STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down * RECALL to SRAM initiated by software or power-up * Infinite read, write, and recall cycles * 1 million STORE cycles to QuantumTrap * 20 year data retention * Single 3

CY14B104LA Features

* 20 ns, 25 ns, and 45 ns access times

* Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA)

* Packages

* 44-/54-pin thin small outline package (TSOP) Type II

* 48-ball fine-pitch ball grid array (FBGA)

* Pb-free and restriction of hazardous substances (R