CY14B104M, CY14B104K - 4-Mbit (512 K x 8/256 K x 16) nvSRAM

Cypress Semiconductor

Datasheet Details

Part number	CY14B104M, CY14B104K
Manufacturer	Cypress Semiconductor
File Size	700.53 KB
Description	4-Mbit (512 K x 8/256 K x 16) nvSRAM
Datasheet	CY14B104K-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY14B104M, CY14B104K. Please refer to the document for exact specifications by model.

25 ns and 45 ns access times.
Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M).
Hands off automatic STORE on power-down with only a small capacitor.
STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
RECALL to SRAM is initiated by software or power-up.
High reliability.
Infinite read, write, and RECALL cycles.
1 million STORE cycles to QuantumTrap.
20 year data retention.

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Other Datasheets by Cypress Semiconductor

CY14B104K - 4-Mbit (512 K x 8/256 K x 16) nvSRAM
CY14B104L - 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA - 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104N - 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104NA - 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B101I - 1-Mbit (128 K x 8) Serial (I2C) nvSRAM

Published: Jun 17, 2018 |