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CY14B104NA, CY14B104LA 4-Mbit (512K x 8/256K x 16) nvSRAM

CY14B104NA Description

CY14B104LA CY14B104NA 4-Mbit (512K × 8/256K × 16) nvSRAM 4-Mbit (512K × 8/256K × 16) nvSRAM .
STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down. RECALL to SRAM initiated by soft.

CY14B104NA Features

* 20 ns, 25 ns, and 45 ns access times
* Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA)
* Packages
* 44-/54-pin thin small outline package (TSOP) Type II
* 48-ball fine-pitch ball grid array (FBGA)
* Pb-free and restriction of hazardous substances (R

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: CY14B104NA, CY14B104LA. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
CY14B104NA, CY14B104LA
Manufacturer
Cypress Semiconductor
File Size
619.78 KB
Datasheet
CY14B104LA-CypressSemiconductor.pdf
Description
4-Mbit (512K x 8/256K x 16) nvSRAM
Note
This datasheet PDF includes multiple part numbers: CY14B104NA, CY14B104LA.
Please refer to the document for exact specifications by model.

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📌 All Tags

4-Mbit 512K 256K nvSRAM Cypress Semiconductor
Cypress Semiconductor CY14B104NA-like datasheet