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CY14B104NA

4-Mbit (512K x 8/256K x 16) nvSRAM

CY14B104NA Features

* 20 ns, 25 ns, and 45 ns access times

* Internally organized as 512K × 8 (CY14B104LA) or 256K × 16 (CY14B104NA)

* Packages

* 44-/54-pin thin small outline package (TSOP) Type II

* 48-ball fine-pitch ball grid array (FBGA)

* Pb-free and restriction of hazardous substances (R

CY14B104NA General Description


* STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
* RECALL to SRAM initiated by software or power-up
* Infinite read, write, and recall cycles
* 1 million STORE cycles to QuantumTrap
* 20 year data retention
* Single 3.

CY14B104NA Datasheet (619.78 KB)

Preview of CY14B104NA PDF

Datasheet Details

Part number:

CY14B104NA

Manufacturer:

Cypress Semiconductor

File Size:

619.78 KB

Description:

4-mbit (512k x 8/256k x 16) nvsram.

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TAGS

CY14B104NA 4-Mbit 512K 256K nvSRAM Cypress Semiconductor

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