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CY7C2670KV18

144-Mbit DDR II+ SRAM Two-Word Burst Architecture

CY7C2670KV18 Features

* 144-Mbit density (4 M × 36)

* 550-MHz clock for high bandwidth

* Two-word burst for reducing address bus frequency

* Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz

* Available in 2.5 clock cycle latency

* Two input clocks (K and K) for precise D

CY7C2670KV18 Datasheet (585.49 KB)

Preview of CY7C2670KV18 PDF

Datasheet Details

Part number:

CY7C2670KV18

Manufacturer:

Cypress Semiconductor

File Size:

585.49 KB

Description:

144-mbit ddr ii+ sram two-word burst architecture.
CY7C2670KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.

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CY7C2670KV18 144-Mbit DDR II + SRAM Two-Word Burst Architecture Cypress Semiconductor

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