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CY9C6264 8K X 8 Magnetic Nonvolatile CMOS RAM

CY9C6264 Description

PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM .
The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process.

CY9C6264 Features

* 100% form-, fit-, and function-compatible with 8K × 8 micropower SRAM CY9C6264
* Fast Read and Write access: 70 ns
* Voltage range: 4.5V
* 5.5V operation
* Low active power: 495 mW (max. ) www. DataSheet4U. com
* Low standby power, CMOS: 825 µW (max. ) De

CY9C6264 Applications

* requiring frequent or rapid writes in a byte wide environment. The CY9C6264 is offered in both commercial and industrial temperature ranges.
* Data retention current: 0 µA at VCC = 0V

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Datasheet Details

Part number
CY9C6264
Manufacturer
Cypress Semiconductor
File Size
273.11 KB
Datasheet
CY9C6264_CypressSemiconductor.pdf
Description
8K X 8 Magnetic Nonvolatile CMOS RAM

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📌 All Tags

Magnetic Nonvolatile CMOS RAM Cypress Semiconductor
Cypress Semiconductor CY9C6264-like datasheet