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CYU01M16SFE 16-Mbit (1M x 16) Pseudo Static RAM

CYU01M16SFE Description

CYU01M16SFE MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM .
of read and write modes.

CYU01M16SFE Features

* Wide voltage range: 1.7V
* 1.95V
* Access Time: 70 ns
* Ultra-low active power
* Typical active current: 3 mA @ f = 1 MHz
* Typical active current: 18 mA @ f = fmax
* Ultra low standby power
* Automatic power-down when deselected

CYU01M16SFE Applications

* such as cellular telephones. The device can be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte H

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Datasheet Details

Part number
CYU01M16SFE
Manufacturer
Cypress Semiconductor
File Size
523.04 KB
Datasheet
CYU01M16SFE_CypressSemiconductor.pdf
Description
16-Mbit (1M x 16) Pseudo Static RAM

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16-Mbit Pseudo Static RAM Cypress Semiconductor
Cypress Semiconductor CYU01M16SFE-like datasheet