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CYU01M16SCE Datasheet - Cypress Semiconductor

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CYU01M16SCE 16-Mbit (1M x 16) Pseudo Static RAM

PRELIMINARY CYU01M16SCE MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM .
of read and write modes.

CYU01M16SCE_CypressSemiconductor.pdf

Preview of CYU01M16SCE PDF

Datasheet Details

Part number:

CYU01M16SCE

Manufacturer:

Cypress Semiconductor

File Size:

508.03 KB

Description:

16-Mbit (1M x 16) Pseudo Static RAM

Features

* Wide voltage range: 2.2V
* 3.6V
* Access Time: 70 ns
* Ultra-low active power
* Typical active current: 3 mA @ f = 1 MHz
* Typical active current: 18 mA @ f = fmax
* Ultra low standby power
* Automatic power-down when deselected

Applications

* such as cellular telephones. The device can be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte H

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