FM18W08 Datasheet - Cypress Semiconductor

FM18W08 256-Kbit (32 K x 8) Wide Voltage Bytewide F-RAM Memory

FM18W08 Features

* 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8

* High-endurance 100 trillion (1014) read/writes

* 151-year data retention (see the Data Retention and Endurance table)

* NoDelay™ writes

* Advanced high-reliability ferroelectric process

Datasheet Details

FM18W08

Cypress Semiconductor

307.47 KB

256-kbit (32 k x 8) wide voltage bytewide f-ram memory.

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