FM24CL04B Datasheet - Cypress Semiconductor

FM24CL04B 4-Kbit (512 x 8) Serial (I2C) F-RAM

The FM24CL04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and s.

FM24CL04B Features

* 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8

* High-endurance 100 trillion (1014) read/writes

* 151-year data retention (See Data Retention and Endurance on page 10)

* NoDelay™ writes

* Advanced high-reliability ferroelectric process

* Fa

FM24CL04B-CypressSemiconductor.pdf