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FM28V102A

1-Mbit (64 K x 16) F-RAM Memory

FM28V102A Features

* Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature:

* 40 C to +85 C 44-pin thin small outline package (TSOP) Type II Restriction of hazardous substances (RoHS) compliant 1-Mbit ferroelectric random access memory (F-RAM) logically organized as

FM28V102A General Description

Address inputs: The 16 address lines select one of 64K words in the F-RAM array. The lowest two address lines A1

*A0 may be used for page mode read and write operations. Write Enable: A write cycle begins when WE is asserted. The rising edge causes the FM28V102A to write the data on the DQ bu.

FM28V102A Datasheet (337.72 KB)

Preview of FM28V102A PDF

Datasheet Details

Part number:

FM28V102A

Manufacturer:

Cypress Semiconductor

File Size:

337.72 KB

Description:

1-mbit (64 k x 16) f-ram memory.

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FM28V102A 1-Mbit F-RAM Memory Cypress Semiconductor

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