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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611 DESCRIPTION The 6N137, HCPL-2601/2611 single-channel and HCPL-26

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K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu

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25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W

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M27C1001 1 Mbit (128Kb x8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre

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M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

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Uniform Sector 8Mbit Dual and Quad SPI Flash FEATURES ◆ GD25Q80 Speed 8M-bit Serial Flash -1024K-byte -256 bytes per programmable page Standard, Dua

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M25P80 8 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY s 8 Mbit of Flash Memory s Figure 1.

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IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signal

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GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte)

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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CY62128EV30 MoBL® 1-Mbit (128K × 8) Static RAM 1-Mbit (128K × 8) Static RAM Features ■ Very high speed: 45 ns ■ Temperature ranges: ❐ Industrial: –40

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EN25T80 EN25T80 8 Mbit Uniform Sector, Serial Flash Memory with Dual Data Mode FEATURES • Single power supply operation - Full voltage range: 2.7-3.6

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128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0

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CY7C1370KV25 CY7C1372KV25 18-Mbit (512K × 36/1M × 18) Pipelined SRAM with NoBL™ Architecture 18-Mbit (512K × 36/1M × 18) Pipelined SRAM with NoBL™ Ar

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E n n n n n n n 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8) FlashFile™ MEMORY Includes Commercial and Extended Temperature Specifications User-Select

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