HY57V281620ETP Datasheet - Hynix Semiconductor

HY57V281620ETP Synchronous DRAM Memory 128Mbit (8M x 16bit)

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.4 / Aug. 2005 1 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620E(L/S)T(P) Series DESCRIPTION The Hynix HY57V281620E(L/S)T(P.

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0 First Version Release 1.1 1. Corrected PIN ASSIGNMENT A12 to NC 1.2 1. Changed IDD3P and IDD3PS 3mA to 5mA 2. Added Industrial Temperature (-40oC to 85oC) 1.3 Changed tOH(Only Symbol ‘H’): 2.5ns -> 2.7ns 1.4 Add Super Low Power-> IDD6: 500uA Draft Date Dec. 2004 Jan. 2005 Feb. 2005 Apr. 2005 Aug. 2005 Remark This document is a general p.

HY57V281620ETP Features

* Voltage: VDD, VDDQ 3.3V supply voltage

* 4096 Refresh cycles / 64ms

* All device pins are compatible with LVTTL interface

* Programmable Burst Length and Burst Type

* 54 Pin TSOPII (Lead or Lead Free Package) - 1, 2, 4, 8 or full page for Sequential Burs

HY57V281620ETP Datasheet (120.33 KB)

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Datasheet Details

Part number:

HY57V281620ETP

Manufacturer:

Hynix Semiconductor

File Size:

120.33 KB

Description:

Synchronous dram memory 128mbit (8m x 16bit).

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HY57V281620ETP Synchronous DRAM Memory 128Mbit 16bit Hynix Semiconductor

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