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HY57V281620ELT - Synchronous DRAM Memory

Hynix Semiconductor

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Datasheet Details

Part number: HY57V281620ELT
Manufacturer: Hynix Semiconductor
File Size: 120.33 KB
Datasheet: HY57V281620ELT_HynixSemiconductor.pdf
Description: Synchronous DRAM Memory

HY57V281620ELT Product details

Description

and is subject to change without notice.

Features

Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks.
Auto refresh and self refresh 4096 Refresh cycles / 64m.

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