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HY57V281620ELT

Synchronous DRAM Memory

HY57V281620ELT Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

HY57V281620ELT General Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Jan. 2005 1 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620E(L)T(P) Series DESCRIPTION The Hynix HY57V281620E(L)T(P) series is a 134,21.

HY57V281620ELT Datasheet (120.33 KB)

Preview of HY57V281620ELT PDF

Datasheet Details

Part number:

HY57V281620ELT

Manufacturer:

Hynix Semiconductor

File Size:

120.33 KB

Description:

Synchronous dram memory.
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 1.0 1.1 First Ve.

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TAGS

HY57V281620ELT Synchronous DRAM Memory Hynix Semiconductor

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