HY57V281620ET Datasheet, 16bit), Hynix Semiconductor

HY57V281620ET Features

• 16bit)
• Voltage: VDD, VDDQ 3.3V supply voltage
• 4096 Refresh cycles / 64ms
• All device pins are compatible with LVTTL interface
• Programmable Burst Length

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Part number:

HY57V281620ET

Manufacturer:

Hynix Semiconductor

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120.33kb

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📄 Datasheet

Description:

Synchronous dram memory 128mbit (8m x 16bit). and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No pa

HY57V281620ET Application

• Applications which require wide data I/O and high bandwidth. HY57V281620E(L/S)T(P) series is organized as 4banks of 2,097,152 x 16. HY57V281620E(L/S

TAGS

HY57V281620ET

Hynix Semiconductor

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