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HY57V281620ELTP

Synchronous DRAM Memory 128Mbit (8M x 16bit)

HY57V281620ELTP Features

* Voltage: VDD, VDDQ 3.3V supply voltage

* 4096 Refresh cycles / 64ms

* All device pins are compatible with LVTTL interface

* Programmable Burst Length and Burst Type

* 54 Pin TSOPII (Lead or Lead Free Package) - 1, 2, 4, 8 or full page for Sequential Burs

HY57V281620ELTP General Description

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.4 / Aug. 2005 1 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620E(L/S)T(P) Series DESCRIPTION The Hynix HY57V281620E(L/S)T(P.

HY57V281620ELTP Datasheet (120.33 KB)

Preview of HY57V281620ELTP PDF

Datasheet Details

Part number:

HY57V281620ELTP

Manufacturer:

Hynix Semiconductor

File Size:

120.33 KB

Description:

Synchronous dram memory 128mbit (8m x 16bit).
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0 .

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HY57V281620ELTP Synchronous DRAM Memory 128Mbit 16bit Hynix Semiconductor

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