ISSI
IS46LR16200D - 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS43/46LR16200D
1M x 16Bits x 2Banks Mobile DDR SDRAM
Description
The IS43LR16200D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM o
Rating:
1
★
(7 votes)
ISSI
IS45VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
Rating:
1
★
(6 votes)
Samsung semiconductor
K4S511533F-YL - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address.
Rating:
1
★
(6 votes)
Samsung semiconductor
K4S561633F-C - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed addr
Rating:
1
★
(5 votes)
Samsung semiconductor
K4S641633H-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add
Rating:
1
★
(5 votes)
ISSI
IS46LR16320C - 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS43/46LR16320C
8M x 16Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D
Rating:
1
★
(5 votes)
Samsung
K4F151611 - 1M x 16Bit CMOS Dynamic RAM
K4F171611D, K4F151611D K4F171612D, K4F151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x
Rating:
1
★
(5 votes)
Samsung
K4M28163PF - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163PF - R(B)G/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba
Rating:
1
★
(5 votes)
Samsung
K4M511633E - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address.
Rating:
1
★
(5 votes)
Samsung
K4M511633E-F1H - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address.
Rating:
1
★
(5 votes)
Hynix
HY62LF16804A - 512Kx16bit full CMOS SRAM
www.DataSheet4U.com
HY62LF16804A Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM
Revision His
Rating:
1
★
(5 votes)
Samsung semiconductor
K4M56163PG - 4M x 16Bit x 4 Banks Mobile SDRAM
www.DataSheet4U.com
K4M56163PG - R(B)E/G/C/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multi
Rating:
1
★
(5 votes)
Hynix Semiconductor
HY27US08281A - (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US(08/16)281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Document Title
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory Revision History
Rev
Rating:
1
★
(5 votes)
Samsung semiconductor
K4S511533F-YC - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address.
Rating:
1
★
(5 votes)
Hynix Semiconductor
H55S1G62MFP-60 - 1Gb (64Mx16bit) Mobile SDRAM
www.DataSheet4U.com
1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O
Specification of 1Gb (64Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized
Rating:
1
★
(5 votes)
ON Semiconductor
N08L63W2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
N08L63W2A
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K × 16 bit Overview
The N08L63W2A is an integrated memory device containing a 8 Mbit Static Ra
Rating:
1
★
(5 votes)
Hynix Semiconductor
H5MS2562JFR-E3M - Mobile DDR SDRAM 256Mbit (16M x 16bit)
256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O
Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM
Memory Cell Array
- Organized as 4banks of
Rating:
1
★
(5 votes)
Sanyo Semicon Device
LC8390M - 16bits A/D and D/A Converters
Rating:
1
★
(4 votes)
Samsung
K4E171612C - 1M x 16Bit CMOS Dynamic RAM
K4E171611C, K4E151611C K4E171612C, K4E151612C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,57
Rating:
1
★
(4 votes)
ISSI
IS45SM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
Rating:
1
★
(4 votes)
