HY51V18163HGJ 1M x 16Bit EDO DRAM

Hynix Semiconductor

Description

HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY .
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.

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Datasheet Specifications

Part number: HY51V18163HGJ
Manufacturer: Hynix Semiconductor
File Size: 107.49 KB
Datasheet: HY51V18163HGJ_HynixSemiconductor.pdf
Description: 1M x 16Bit EDO DRAM

Features

* Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part N

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HY51V18163HGJ 16Bit EDO DRAM Hynix Semiconductor

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