HY51V18163HGJ - 1M x 16Bit EDO DRAM
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.
HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
The HY51V(S)18163HG/HGL offers Extended Data Out PageMode as a high sp
HY51V18163HGJ Features
* Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part N
