HY51V18163HGJ Datasheet - Hynix Semiconductor

HY51V18163HGJ 1M x 16Bit EDO DRAM

The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out PageMode as a high sp.

HY51V18163HGJ Features

* Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part N

HY51V18163HGJ_HynixSemiconductor.pdf