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HY51V18163HGJ-6

1M x 16Bit EDO DRAM

HY51V18163HGJ-6 Features

* Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part N

HY51V18163HGJ-6 General Description

The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out PageMode as a high sp.

HY51V18163HGJ-6 Datasheet (107.49 KB)

Preview of HY51V18163HGJ-6 PDF

Datasheet Details

Part number:

HY51V18163HGJ-6

Manufacturer:

Hynix Semiconductor

File Size:

107.49 KB

Description:

1m x 16bit edo dram.

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TAGS

HY51V18163HGJ-6 16Bit EDO DRAM Hynix Semiconductor

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