Datasheet4U Logo Datasheet4U.com

HY51V18163HGJ-5 - 1M x 16Bit EDO DRAM

HY51V18163HGJ-5 Description

HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY .
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.

HY51V18163HGJ-5 Features

* Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part N

📥 Download Datasheet

Preview of HY51V18163HGJ-5 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
  • HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)
  • HY5110A - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY5110NA2W - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY5110W - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY5116164B - Extended Data Out mode (Hyundai)
  • HY5116164C - Extended Data Out mode (Hyundai)
  • HY5116400B - 4M x 4-Bit CMOS DRAM (Hyundai Electronics)

📌 All Tags

16Bit EDO DRAM Hynix Semiconductor
Hynix Semiconductor HY51V18163HGJ-5-like datasheet