HY51V18163HGJ-7 Datasheet - Hynix Semiconductor

HY51V18163HGJ-7, 1M x 16Bit EDO DRAM

HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY .
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.

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Datasheet Details

Part number:

HY51V18163HGJ-7

Manufacturer:

Hynix Semiconductor

File Size:

107.49 KB

Description:

1M x 16Bit EDO DRAM

Features

* Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part N

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HY51V18163HGJ-7 16Bit EDO DRAM Hynix Semiconductor

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