K4S641633H-R
Samsung semiconductor
112.38kb
1m x 16bit x 4 banks mobile sdram in 54fbga. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with
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K4S641633H-C - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641633H-F1H - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641633H-F1L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641633H-F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641633H-G - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641633H-L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641633H-N - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641633H-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641633H-RE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung semiconductor)
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S641632C - 1M x 16Bit x 4 Banks Synchronous DRAM
(Samsung semiconductor)
K4S641632C
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• • • • JEDEC standard 3.3V power supply LVTTL patible with multiplexed address Four bank.
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