K4S641633H-RE Datasheet, In 54fbga, Samsung semiconductor

1m x 16bit x 4 banks mobile sdram in 54fbga

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K4S641633H-RE

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Samsung semiconductor

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Description:

1m x 16bit x 4 banks mobile sdram in 54fbga.
The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design all.

✔ K4S641633H-RE Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur

✔ K4S641633H-RE Application

ORDERING INFORMATION Part No. K4S641633H-R(B)E/N/G/C/L/F75 K4S641633H-R(B)E/N/G/C/L/F1H K4S641633H-R(B)E/N

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K4S641633H-RE 16Bit Banks Mobile SDRAM 54FBGA Samsung semiconductor