K4S281632D-NC1H, K4S - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

K4S281632D-NC1H Description

K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev.0.1 Sept.2001 * Samsung Electronics reserves the right t.
The K4S281632D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high.

K4S281632D-NC1H Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

K4S281632D-NC1H Applications

* ORDERING INFORMATION Max Freq. 183MHz(CL=3) 166MHz(CL=3) 133MHz(CL=2) 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 2M x 16 2M x 16 2M x 16 2M x 16 Refresh Counter Output Buffer Row D

📥 Download Datasheet

K4S281632D-NC1H Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S281632D-NC1H, K4S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: K4S281632D-NC1H, K4S
Manufacturer: Samsung semiconductor
File Size: 112.04 KB
Datasheet: K4S-28163.pdf
Description: 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Note: This datasheet PDF includes multiple part numbers: K4S281632D-NC1H, K4S.
Please refer to the document for exact specifications by model.

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128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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