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K4S280832B Datasheet 128m-bit Sdram

Manufacturer: Samsung Electronics

Overview: K4S280832B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug.

General Description

The K4S280832B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (4K cycle.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung semiconductor Logo K4S280832A 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung semiconductor Logo K4S280832C 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung semiconductor Logo K4S280832E-TC75 128Mb E-die SDRAM Specification Samsung semiconductor
Samsung semiconductor Logo K4S280832E-TL75 128Mb E-die SDRAM Specification Samsung semiconductor
Samsung semiconductor Logo K4S280832F-TC75 128Mb F-die SDRAM Specification Samsung semiconductor

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