Samsung Electronics K4S280832B
The K4S280832B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.| Part No. | K4S280832B |
|---|---|
| Datasheet | K4S280832B Download |
| Manufacturer |  Samsung Electronics |
| Description | 128M-bit SDRAM |
| Buy | Stock & Price |
FEATURES
● JEDEC standard 3.3V power supply● LVTTL compatible with multiplexed address
● Four banks operation
● MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
● All inputs are sampled at the positive going edge of the system clock.
● Burst read single-bit write operation
● DQM for masking
● Auto & self refresh
● 64ms refresh period (4K cycle) CMOS SDRAM
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4S280832B-TC/L75 K4S280832B-TC/L80 K4S280832B-TC/L1H K4S280832B-TC/L1L K4S280832B-TC/L10 Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) 66MHz(CL=2 &3) LVTTL...
