Datasheet Details
Part number:
K4S281632B-TL10, K4S
Manufacturer:
Samsung semiconductor
File Size:
108.47 KB
Description:
128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.
Note:
This datasheet PDF includes multiple part numbers: K4S281632B-TL10, K4S.
Please refer to the document for exact specifications by model.
K4S281632B-TL10, K4S, 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock
K4S281632B-TL10 Features
* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a
📁 Related Datasheet
📌 All Tags
