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K4S281632B-TC1H Datasheet - Samsung semiconductor

K4S281632B-TC1H 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

K4S281632B-TC1H Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

K4S281632B-TC1H Datasheet (108.47 KB)

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Datasheet Details

Part number:

K4S281632B-TC1H

Manufacturer:

Samsung semiconductor

File Size:

108.47 KB

Description:

128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.

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K4S281632B-TC1H 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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