K4S281632B Datasheet - Samsung semiconductor

K4S281632B, 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug.1999 * Samsung Electronics reserves the righ.
The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high.

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Datasheet Details

Part number:

K4S281632B

Manufacturer:

Samsung semiconductor

File Size:

108.47 KB

Description:

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

Applications

* ORDERING INFORMATION Part No. K4S281632B-TC/L75 K4S281632B-TC/L80 K4S281632B-TC/L1H K4S281632B-TC/L1L K4S281632B-TC/L10 Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) 66MHz(CL=2 &3) LVTTL 54 TSOP(II) Interface Package FUNCTIONAL BL

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K4S281632B 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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