K4S281632B-N Datasheet - Samsung semiconductor

K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP

The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo.

K4S281632B-N Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave)

* All inputs are sa

K4S281632B-N_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S281632B-N

Manufacturer:

Samsung semiconductor

File Size:

64.04 KB

Description:

2m x 16bit x 4 banks synchronous dram in stsop.

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K4S281632B-N K4S281632B-N 16Bit Banks Synchronous DRAM sTSOP Samsung semiconductor

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