Part number:
K4S281632B-N
Manufacturer:
Samsung semiconductor
File Size:
64.04 KB
Description:
2m x 16bit x 4 banks synchronous dram in stsop.
K4S281632B-N_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4S281632B-N
Manufacturer:
Samsung semiconductor
File Size:
64.04 KB
Description:
2m x 16bit x 4 banks synchronous dram in stsop.
K4S281632B-N, 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP
The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo
K4S281632B-N Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave)
* All inputs are sa
📁 Related Datasheet
📌 All Tags