K4S281632B-N Datasheet - Samsung semiconductor

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K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP

shrink-TSOP K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP .
The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s hig.

K4S281632B-N_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S281632B-N

Manufacturer:

Samsung semiconductor

File Size:

64.04 KB

Description:

2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave)
* All inputs are sa

Applications

* ORDERING INFORMATION Part No. K4S281632B-NC/L1H K4S281632B-NC/L1L Max Freq. 100MHz(CL=2) 100MHz(CL=3) Interface Package LVTTL 54pin sTSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 2M x 16 2M x 16 2M x 16 2M x 16 Refresh Counter Output Buffer Row Deco

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K4S281632B-N 16Bit Banks Synchronous DRAM sTSOP Samsung semiconductor

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