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K4M641633K 1M x 16Bit x 4 Banks Mobile SDRAM

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Description

www.DataSheet4U.com K4M641633K - R(B)N/G/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M641633K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high p.

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Datasheet Specifications

Part number
K4M641633K
Manufacturer
Samsung semiconductor
File Size
139.68 KB
Datasheet
K4M641633K_Samsungsemiconductor.pdf
Description
1M x 16Bit x 4 Banks Mobile SDRAM

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4M641633K-R(B)N/G/L/F75 K4M641633K-R(B)N/G/L/F1H K4M641633K-R(B)N/G/L/F1L Max Freq. 133MHz(CL=3),111MHz(CL=2) 111MHz(CL=2) 111MHz(CL=3)
* 1,83MHz(CL=2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)L/

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