K4M283233H 1M x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

www.DataSheet4U.com K4M283233H - F(H)N/G/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M283233H
Manufacturer: Samsung semiconductor
File Size: 169.02 KB
Datasheet: K4M283233H_Samsungsemiconductor.pdf
Description: 1M x 32Bit x 4 Banks Mobile SDRAM

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4M283233H-F(H)N/G/L/F60 K4M283233H-F(H)N/G/L/F75 K4M283233H-F(H)N/G/L/F7L Max Freq. 166MHz(CL=3) 133MHz(CL=3), 111MHz(CL=2) 133MHz(CL=3)
* 1, 83MHz(CL=2) LVCMOS 90 FBGA Pb (Pb Free) Interface Package - F(H)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - F(H)

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K4M283233H 32Bit Banks Mobile SDRAM Samsung semiconductor

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