K4M283233H
Samsung semiconductor
169.02kb
1m x 32bit x 4 banks mobile sdram. The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated wit
TAGS
📁 Related Datasheet
K4M28323PH - 1M x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
..
K4M28323PH - F(H)E/G/C/F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 1.8V power supply. • LVCMOS patible with multi.
K4M281633F - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-C - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-F1L - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-G - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-L - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-N - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-RE - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M28163LF - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4M28163LF - R(B)E/N/S/C/L/R
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4M28163LH - Mobile SDRAM
(Samsung semiconductor)
K4M28163LH - R(B)N/G/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • Fou.
Stock and price