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K4M281633F-L

2M x 16Bit x 4 Banks Mobile SDRAM

K4M281633F-L Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4M281633F-L General Description

The K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M281633F-L Datasheet (114.34 KB)

Preview of K4M281633F-L PDF

Datasheet Details

Part number:

K4M281633F-L

Manufacturer:

Samsung

File Size:

114.34 KB

Description:

2m x 16bit x 4 banks mobile sdram.

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TAGS

K4M281633F-L 16Bit Banks Mobile SDRAM Samsung

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