K4M28163PH 2M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

www.DataSheet4U.com K4M28163PH - R(B)E/G/C/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M28163PH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M28163PH
Manufacturer: Samsung semiconductor
File Size: 141.78 KB
Datasheet: K4M28163PH_Samsungsemiconductor.pdf
Description: 2M x 16Bit x 4 Banks Mobile SDRAM

Features

* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M28163PH-R(B)E/G/C/F75 K4M28163PH-R(B)E/G/C/F90 K4M28163PH-R(B)E/G/C/F1L Max Freq. 133MHz(CL3), 83MHz(CL2) 111MHz(CL3), 83MHz(CL2) 111MHz(CL3)
* 1, 66MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)E/G : Normal/Low Power, Extended Temperature(-25°C ~

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K4M28163PH 16Bit Banks Mobile SDRAM Samsung semiconductor

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