K4M28163PF-RBGF75 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Samsung

Description

K4M28163PF - R(B)G/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M28163PF-RBGF75
Manufacturer: Samsung
File Size: 113.95 KB
Datasheet: K4M28163PF-RBGF75_Samsungsemiconductor.pdf
Description: 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Features

* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M28163PF-R(B)G/F75 K4M28163PF-R(B)G/F90 K4M28163PF-R(B)G/F1L Max Freq. 133MHz(CL=3), 83MHz(CL=2) 111MHz(CL=3), 83MHz(CL=2) 111MHz(CL=3)
* 1, 66MHz(CL=2) LVCMOS 54 FBGA Leaded (Lead Free) Interface Package - R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C) -

K4M28163PF-RBGF75 Distributors

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K4M28163PF-RBGF75 16Bit Banks Mobile SDRAM 54FBGA Samsung

Samsung K4M28163PF-RBGF75-like datasheet