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K4M28163PF-RBGF75 Datasheet - Samsung

2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M28163PF-RBGF75 Features

* 1.8V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with ad

K4M28163PF-RBGF75 General Description

The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M28163PF-RBGF75 Datasheet (113.95 KB)

Preview of K4M28163PF-RBGF75 PDF

Datasheet Details

Part number:

K4M28163PF-RBGF75

Manufacturer:

Samsung

File Size:

113.95 KB

Description:

2m x 16bit x 4 banks mobile sdram in 54fbga.

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TAGS

K4M28163PF-RBGF75 16Bit Banks Mobile SDRAM 54FBGA Samsung

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