K4M28163LF 2M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

K4M28163LF - R(B)E/N/S/C/L/R 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M28163LF
Manufacturer: Samsung semiconductor
File Size: 141.77 KB
Datasheet: K4M28163LF_Samsungsemiconductor.pdf
Description: 2M x 16Bit x 4 Banks Mobile SDRAM

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M28163LF-R(B)E/N/S/C/L/R75 K4M28163LF-R(B)E/N/S/C/L/R1H K4M28163LF-R(B)E/N/S/C/L/R1L www. DataSheet4U. com Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 Interface Package 54 FBGA Leaded (Lead Free) LVCMOS - R(B)E/N/S : Normal / Low / Super Low Power, Ex

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K4M28163LF 16Bit Banks Mobile SDRAM Samsung semiconductor

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