K4M51163LC 8M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

www.DataSheet4U.com K4M51163LC - R(B)N/G/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high.

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Datasheet Specifications

Part number: K4M51163LC
Manufacturer: Samsung semiconductor
File Size: 139.70 KB
Datasheet: K4M51163LC_Samsungsemiconductor.pdf
Description: 8M x 16Bit x 4 Banks Mobile SDRAM

Features

* VDD/VDDQ = 2.5V/2.5V
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with

Applications

* ORDERING INFORMATION Part No. K4M51163LC-R(B)N/G/L/F75 K4M51163LC-R(B)N/G/L/F1H K4M51163LC-R(B)N/G/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)L/F

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K4M51163LC 16Bit Banks Mobile SDRAM Samsung semiconductor

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