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K4M511633E-Y Datasheet - Samsung

8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M511633E-Y Features

* 3.0V or 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4M511633E-Y General Description

The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M511633E-Y Datasheet (112.42 KB)

Preview of K4M511633E-Y PDF

Datasheet Details

Part number:

K4M511633E-Y

Manufacturer:

Samsung

File Size:

112.42 KB

Description:

8m x 16bit x 4 banks mobile sdram in 54fbga.

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TAGS

K4M511633E-Y 16Bit Banks Mobile SDRAM 54FBGA Samsung

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