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K4M51163LE - 8M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

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Datasheet Details

Part number: K4M51163LE
Manufacturer: Samsung semiconductor
File Size: 135.47 KB
Datasheet: K4M51163LE_Samsungsemiconductor.pdf
Description: 8M x 16Bit x 4 Banks Mobile SDRAM

K4M51163LE Product details

Description

The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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