Part number:
K4M51163LE
Manufacturer:
Samsung semiconductor
File Size:
135.47 KB
Description:
8m x 16bit x 4 banks mobile sdram.
K4M51163LE Datasheet (135.47 KB)
K4M51163LE
Samsung semiconductor
135.47 KB
8m x 16bit x 4 banks mobile sdram.
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad
📁 Related Datasheet
K4M51163LC - 8M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
..
K4M51163LC - R(B)N/G/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with mul.
K4M511633C - 8M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
..
K4M511633C - R(B)N/G/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible wit.
K4M511633E - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung)
K4M511633E - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..
K4M511633E-C - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung)
K4M511633E - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..
K4M511633E-F1H - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung)
K4M511633E - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..
K4M511633E-F1L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung)
K4M511633E - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..