K4M51163LE Datasheet, Sdram, Samsung semiconductor

K4M51163LE Features

• Sdram
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 &

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Part number:

K4M51163LE

Manufacturer:

Samsung semiconductor

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135.47kb

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📄 Datasheet

Description:

8m x 16bit x 4 banks mobile sdram. The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated wit

K4M51163LE Application

• Applications ORDERING INFORMATION Part No. K4M51163LE-Y(P)C/L/F80 K4M51163LE-Y(P)C/L/F1H K4M51163LE-Y(P)C/L/F1L Max Freq. 125MHz(CL=3) 105MHz(CL=2

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K4M51163LE

Samsung semiconductor

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