K4M51163LE 8M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

www.DataSheet4U.com K4M51163LE - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M51163LE
Manufacturer: Samsung semiconductor
File Size: 135.47 KB
Datasheet: K4M51163LE_Samsungsemiconductor.pdf
Description: 8M x 16Bit x 4 Banks Mobile SDRAM

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M51163LE-Y(P)C/L/F80 K4M51163LE-Y(P)C/L/F1H K4M51163LE-Y(P)C/L/F1L Max Freq. 125MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 54 FBGA Leaded (Lead Free) Interface Package - Y(P)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C) NOTES : 1. In

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K4M51163LE 16Bit Banks Mobile SDRAM Samsung semiconductor

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