K4M511633E-F1L Datasheet, 54fbga, Samsung

K4M511633E-F1L Features

• 54fbga
• 3.0V or 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency

PDF File Details

Part number:

K4M511633E-F1L

Manufacturer:

Samsung

File Size:

112.42kb

Download:

📄 Datasheet

Description:

8m x 16bit x 4 banks mobile sdram in 54fbga. The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated wit

K4M511633E-F1L Application

• Applications ORDERING INFORMATION Part No. K4M511633E-Y(P)C/L/F75 K4M511633E-Y(P)C/L/F1H K4M511633E-Y(P)C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2

TAGS

K4M511633E-F1L

Samsung

📁 Related Datasheet

K4M511633E-F1H - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..

K4M511633E-F75 - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..

K4M511633E-C - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..

K4M511633E-L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..

K4M511633E-P - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..

K4M511633E-Y - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..

K4M511633E - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS patible with multiplexed address..

K4M511633C - 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
.. K4M511633C - R(B)N/G/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible wit.

K4M51163LC - 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
.. K4M51163LC - R(B)N/G/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS patible with mul.

K4M51163LE - 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
.. K4M51163LE - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multipl.