Part number:
K4M511633E-F1L
Manufacturer:
Samsung
File Size:
112.42 KB
Description:
8m x 16bit x 4 banks mobile sdram in 54fbga.
K4M511633E-F1L_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4M511633E-F1L
Manufacturer:
Samsung
File Size:
112.42 KB
Description:
8m x 16bit x 4 banks mobile sdram in 54fbga.
K4M511633E-F1L, 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4M511633E-F1L Features
* 3.0V or 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle
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