K4M511633E-F1L Datasheet - Samsung

K4M511633E-F1L 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M511633E-F1L Features

* 3.0V or 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4M511633E-F1L_Samsungsemiconductor.pdf