K4M51323LC-G, K4M51323LC-SN Datasheet - Samsung semiconductor

K4M51323LC-G Mobile-SDRAM

The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M51323LC-G Features

* VDD/VDDQ = 2.5V/2.5V

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with

K4M51323LC-SN_Samsungsemiconductor.pdf

K4M51323LC-G Datasheet Preview — This datasheet PDF includes multiple part numbers: K4M51323LC-G, K4M51323LC-SN. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4M51323LC-G, K4M51323LC-SN

Manufacturer:

Samsung semiconductor

File Size:

181.67 KB

Description:

Mobile-sdram.

Note:

This datasheet PDF includes multiple part numbers: K4M51323LC-G, K4M51323LC-SN.
Please refer to the document for exact specifications by model.

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TAGS

K4M51323LC-G K4M51323LC-SN Mobile-SDRAM Samsung semiconductor

K4M51323LC-G Distributor