K4M51323LC-SN Mobile-SDRAM

Samsung semiconductor

Description

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M51323LC-SN
Manufacturer: Samsung semiconductor
File Size: 181.67 KB
Datasheet: K4M51323LC-SN_Samsungsemiconductor.pdf
Description: Mobile-SDRAM

Features

* VDD/VDDQ = 2.5V/2.5V
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with

Applications

* ORDERING INFORMATION Part No. K4M51323LC-S(D)N/G/L/F75 K4M51323LC-S(D)N/G/L/F7L
* 1 Max Freq. 133MHz(CL=3), 111MHz(CL=2) 133MHz(CL=3), 83MHz(CL=2) Interface LVCMOS Package 90 FBGA Pb (Pb Free) - S(D)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - S(D)L/F : Low Power, Commercial Temper

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K4M51323LC-SN Mobile-SDRAM Samsung semiconductor

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