K4M51323LE-M Datasheet - Samsung

K4M51323LE-M, 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M51323LE - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4M51323LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high.

K4M51323LE-M_Samsungsemiconductor.pdf

K4M51323LE-M Datasheet Preview — Preview of K4M51323LE-M PDF

Datasheet Details

Part number:

K4M51323LE-M

Manufacturer:

Samsung

File Size:

141.21 KB

Description:

4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M51323LE-M(E)C/L/F80 K4M51323LE-M(E)C/L/F1H K4M51323LE-M(E)C/L/F1L Max Freq. 125MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C) NOTES : 1. In

K4M51323LE-M Distributors

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K4M51323LE-M 32Bit Banks Mobile SDRAM 90FBGA Samsung

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