K4M51163PC-x 8M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

K4M51163PC - R(B)E/G/C/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M51163PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M51163PC-x
Manufacturer: Samsung semiconductor
File Size: 154.40 KB
Datasheet: K4M51163PC-x_Samsungsemiconductor.pdf
Description: 8M x 16Bit x 4 Banks Mobile SDRAM

Features

* 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS www. DataSheet4U. com cycle with address key programs.

Applications

* ORDERING INFORMATION Part No. K4M51163PC-R(B)E/G/C/F75 K4M51163PC-R(B)E/G/C/F90 K4M51163PC-R(B)E/G/C/F1L Max Freq. 133MHz(CL=3), 83MHz(CL=2) 111MHz(CL=3), 83MHz(CL=2) 111MHz(CL=3)
* 1, 66MHz(CL=2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)E/G : Normal/Low Power, Extended Temperature(-

K4M51163PC-x Distributors

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K4M51163PC-x 16Bit Banks Mobile SDRAM Samsung semiconductor

Samsung semiconductor K4M51163PC-x-like datasheet