K4M511633E-P Datasheet, 54fbga, Samsung

✔ K4M511633E-P Features

3.0V or 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bu

✔ K4M511633E-P Application

ORDERING INFORMATION Part No. K4M511633E-Y(P)C/L/F75 K4M511633E-Y(P)C/L/F1H K4M511633E-Y(P)C/L/F1L Max Fre

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Part number:

K4M511633E-P

Manufacturer:

Samsung

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112.42kb

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📄 Datasheet

Description:

8m x 16bit x 4 banks mobile sdram in 54fbga. The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated wit

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TAGS

K4M511633E-P 16Bit Banks Mobile SDRAM 54FBGA Samsung