K4M281633F-C
Samsung
114.34kb
2m x 16bit x 4 banks mobile sdram. The K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated wit
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K4M281633F-F1L - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-G - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-L - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-N - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F-RE - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M281633F - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung)
K4M281633F - R(B)E/N/G/C/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4M28163LF - 2M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4M28163LF - R(B)E/N/S/C/L/R
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4M28163LH - Mobile SDRAM
(Samsung semiconductor)
K4M28163LH - R(B)N/G/L/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. • Fou.
K4M28163PF - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung)
K4M28163PF - R(B)G/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS patible with multiplexed address. • Four ba.
K4M28163PF-F75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
(Samsung)
K4M28163PF - R(B)G/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS patible with multiplexed address. • Four ba.