Datasheet4U Logo Datasheet4U.com

K4M28163LH Datasheet - Samsung semiconductor

Mobile SDRAM

K4M28163LH Features

* 2.5V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with ad

K4M28163LH General Description

The K4M28163LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M28163LH Datasheet (140.31 KB)

Preview of K4M28163LH PDF

Datasheet Details

Part number:

K4M28163LH

Manufacturer:

Samsung semiconductor

File Size:

140.31 KB

Description:

Mobile sdram.

📁 Related Datasheet

K4M28163LF 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

K4M281633F 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)

K4M281633F-C 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)

K4M281633F-F1L 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)

K4M281633F-G 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)

K4M281633F-L 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)

K4M281633F-N 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)

K4M281633F-RE 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung)

K4M28163PF 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)

K4M28163PF-F75 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)

TAGS

K4M28163LH Mobile SDRAM Samsung semiconductor

Image Gallery

K4M28163LH Datasheet Preview Page 2 K4M28163LH Datasheet Preview Page 3

K4M28163LH Distributor