K4M28163LH Mobile SDRAM

Samsung semiconductor

Description

K4M28163LH - R(B)N/G/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M28163LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNG’s high.

📥 Download Datasheet

K4M28163LH Datasheet Preview — Preview of K4M28163LH PDF

Datasheet Specifications

Part number: K4M28163LH
Manufacturer: Samsung semiconductor
File Size: 140.31 KB
Datasheet: K4M28163LH_Samsungsemiconductor.pdf
Description: Mobile SDRAM

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M28163LH-R(B)N/G/L/F75 K4M28163LH-R(B)N/G/L/F1H K4M28163LH-R(B)N/G/L/F1L www. DataSheet4U. com Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL3), 111MHz(CL2) 111MHz(CL3)
* 1, 83MHz(CL2) Interface Package 54 FBGA Pb (Pb Free) LVCMOS - R(B)N/G : Low Power, Extended

K4M28163LH Distributors

📁 Related Datasheet

K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N

📌 All Tags

K4M28163LH Mobile SDRAM Samsung semiconductor

Samsung semiconductor K4M28163LH-like datasheet