K4M281633F-N Datasheet - Samsung

K4M281633F-N, 2M x 16Bit x 4 Banks Mobile SDRAM

K4M281633F - R(B)E/N/G/C/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high.

K4M281633F-N_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4M281633F-N

Manufacturer:

Samsung

File Size:

114.34 KB

Description:

2M x 16Bit x 4 Banks Mobile SDRAM

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4M281633F-R(B)E/N/G/C/L/F75 K4M281633F-R(B)E/N/G/C/L/F1H K4M281633F-R(B)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 54 FBGA Leaded (Lead Free) Interface Package - R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C

K4M281633F-N Distributors

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K4M281633F-N 16Bit Banks Mobile SDRAM Samsung

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