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GVT71512B18 Datasheet - Cypress Semiconductor

GVT71512B18 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The GVT71256B36/CY7C1361A and GVT71512B18/ CY7C1363A SRAMs integrat.

GVT71512B18 Features

* Fast access times: 6.0, 6.5, 7.0, and 8.0 ns Fast clock speed: 150, 133, 117, and 100 MHz 1 ns set-up time and hold time Fast OE access times: 3.5 ns and 4.0 ns 3.3V

* 5% and +10% pow

GVT71512B18 Datasheet (791.54 KB)

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Datasheet Details

Part number:

GVT71512B18

Manufacturer:

Cypress Semiconductor

File Size:

791.54 KB

Description:

256k x 36 / 512k x 18 sunchronous burse flowthrough sram.

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GVT71512B18 256K 512K Sunchronous Burse Flowthrough SRAM Cypress Semiconductor

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