GVT71256B36 (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM

Cypress Semiconductor

Description

( DataSheet : www.DataSheet4U.com ) 1CY7C1361A CY7C1361A/GVT71256B36 CY7C1363A/GVT71512B18 256K x 36/512K x 18 Synchronous Burst Flowthrough SRAM F.
The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal techno.

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Datasheet Specifications

Part number: GVT71256B36
Manufacturer: Cypress Semiconductor
File Size: 791.54 KB
Datasheet: GVT71256B36_CypressSemiconductor.pdf
Description: (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM

Features

* Fast access times: 6.0, 6.5, 7.0, and 8.0 ns Fast clock speed: 150, 133, 117, and 100 MHz 1 ns set-up time and hold time Fast OE access times: 3.5 ns and 4.0 ns 3.3V
* 5% and +10% pow

Applications

* JTAG boundary scan for B and T package version Low profile 119-bump, 14-mm x 22-mm PBGA (Ball Grid Array) and 100-pin TQFP packages and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positiveedge-triggered Clock Input (CLK). The synchronou

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GVT71256B36 GVT7xxxx 256K 512K Sunchronous Burse Flowthrough SRAM Cypress Semiconductor

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