GVT71256T18 Datasheet - Cypress Semiconductor

GVT71256T18 (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM

The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Selection Guide 7C1359A-166 71256T36-6 Maximum Access Time (ns) M.

GVT71256T18 Features

* Fast match times: 3.5, 3.8, 4.0 and 4.5 ns Fast clock speed: 166, 150, 133, and 100 MHz Fast OE access times:

GVT71256T18_CypressSemiconductor.pdf

GVT71256T18 Datasheet Preview — Preview of GVT71256T18 PDF

Datasheet Details

Part number:

GVT71256T18

Manufacturer:

Cypress Semiconductor

File Size:

283.14 KB

Description:

(gvt71256t18 / gvt7c1359a) 256k x 18 synchronous-pipelined cache tag ram.

📁 Related Datasheet

GVT71256B36 (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM (Cypress Semiconductor)

GVT71256C36 (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM (Cypress Semiconductor)

GVT71256D36 (GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM (Cypress Semiconductor)

GVT71256E18 (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM (Cypress Semiconductor)

GVT71256ZB36 (GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM (Cypress Semiconductor)

GVT71256ZC36 (GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture (Cypress Semiconductor)

GVT71512B18 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM (Cypress Semiconductor)

GVT71512C18 256K X 36/512K X 18 Pipelined SRAM (Cypress Semiconductor)

TAGS

GVT71256T18 GVT71256T18 GVT71256T18 GVT7C1359A 256K Synchronous-pipelined Cache Tag RAM Cypress Semiconductor

GVT71256T18 Distributor