GVT71256ZC36 Datasheet - Cypress Semiconductor

GVT71256ZC36 (GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture

The CY7C1354A/GVT71256ZC36 and CY7C1356A/ GVT71512ZC18 SRAMs are designed to eliminate dead cycles when transitioning from Read to Write or vice versa. These SRAMs are optimized for 100% bus utilization and achieve Zero Bus Latency (ZBL)/No Bus Latency (NoBL). They integrate 262,144 × 36 and 524.

GVT71256ZC36 Features

* Zero Bus Latency, no dead cycles between Write and Read cycles

* Fast clock speed: 200, 166, 133, 100 MHz

* Fast access time: 3.2, 3.6, 4.2, 5.0 ns

* Internally synchronized registered outputs eliminate the need to control OE

* Single 3.3V

* 5% and +5

GVT71256ZC36_CypressSemiconductor.pdf

GVT71256ZC36 Datasheet Preview — Preview of GVT71256ZC36 PDF

Datasheet Details

Part number:

GVT71256ZC36

Manufacturer:

Cypress Semiconductor

File Size:

597.12 KB

Description:

(gvt7xxxx) 256kx36/512kx18 pipelined sram with nobltm architecture.

📁 Related Datasheet

GVT71256ZB36 (GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM (Cypress Semiconductor)

GVT71256B36 (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM (Cypress Semiconductor)

GVT71256C36 (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM (Cypress Semiconductor)

GVT71256D36 (GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM (Cypress Semiconductor)

GVT71256E18 (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM (Cypress Semiconductor)

GVT71256T18 (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM (Cypress Semiconductor)

GVT71512B18 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM (Cypress Semiconductor)

GVT71512C18 256K X 36/512K X 18 Pipelined SRAM (Cypress Semiconductor)

TAGS

GVT71256ZC36 GVT71256ZC36 GVT7xxxx 256Kx36 512Kx18 Pipelined SRAM With Nobltm Architecture Cypress Semiconductor

GVT71256ZC36 Distributor